【 Weak current College 】 bipolar transistor parameters symbols and meaning 】

Cc-the collecting electrode capacitance
Ccb-collector and base interelectrode capacitance
Cce-emitter ground output capacitor
Ci-input capacitance
Cib---total base input capacitance
Cie---total emitter input capacitance
Cies---total emitter circuit input capacitance
Cieo---total emission drain input capacitance
Cn---and capacitor (detection tester for electronic circuit parameters)
Co---output capacitor
Cob---total base output capacitor. In the base electrode circuit, the collector and base between output capacitor
Coe---total emitter output capacitor
Coeo---total emission with open-drain output capacitor
Cre---total emitter feedback capacitance
Cic-collector junction barrier capacitance
CL---load capacitance (detection tester for electronic circuit parameters)
Cp-parallel capacitance (detection tester for electronic circuit parameters)
BVcbo---launch-drain, the collector and base-Breakdown voltage
BVceo---Foundation drain, votalge CE junction
BVebo---collector EB-Breakdown voltage
BVces---base and emitter Breakdown voltage short-circuit CE junction
Cer-BV--base and emitter threaded a CE junction resistive, votalge
D-duty
FT-characteristic frequency
Fmax---maximum oscillation frequency. When the transistor power gain equal to 1 when the operating frequency of
HFE---total emitter current zoom factor
HIE---total emitter static input impedance
HOE---total emitter static output conductance
RE-h--total emitter static voltage feedback coefficient
Hie---total emission of very small signal circuit input impedance
Hre---total emission of very small signal open-circuit voltage feedback coefficient
Hfe---total emission of very small signal amplification circuit voltage
Hoe---total emission of very small signal open circuit output admittance
IB-base DC or AC current average
Ic-collector DC or AC current average
IE-emitter DC or AC current average
Icbo-base grounding,emitter-to-ground open circuit, the VCB reverse voltage condition of the collector and base cutoff current between reverse
Iceo---emitter ground, base on open circuit, within the prescribed reverse voltage VCE, collector and emitter cutoff current between reverse
Iebo---grounding base, collector and open circuit, within the prescribed reverse voltage VEB conditions, the emitter and the base cutoff current between reverse
Icer-base and emitter-series resistance R, collector and emitter voltage VCE as between the regulation value, collector and emitter cutoff current between reverse
Ices-emitter ground, base on short circuit, within the prescribed reverse voltage VCE, collector and emitter cutoff current between reverse
Icex-emitter ground, base and emitter between specified bias, the reverse bias voltage VCE, collector and emitter cutoff current between reverse
ICM-collector maximum allowable current or AC current maximum average.
IBM---in the collecting electrode allows dissipation power, can continuously through the base of DC current maximum, or AC current maximum average
ICMP-collector maximum allowed pulse current
ISB---two punctures and current
IAGC---forward automatically control current
Pc---collector dissipation power
PCM-collector maximum allowable dissipation power
Pi-input power
Po---output power
Posc-oscillation power
Pn-a-noise power
Ptot---total dissipation power
ESB---two punctures energy
Rbb '---base area spreading resistance (base region extrinsic resistance)
Rbb'Cc---base-collector time constant, that is, base spreading resistance and collector junction capacitance of product
Rie-emitter ground, AC output short-circuit of input resistance
Roe-emitter ground, in the VCE, Ic or IE, frequency measurement of AC input short-circuit output resistance
RE: external emitter resistors (detection tester for electronic circuit parameters)
RB---external base resistor (detection tester for electronic circuit parameters)
Rc-external collector resistance (detection tester for electronic circuit parameters)
RBE-external base electrode-emitter resistors between (detection tester for electronic circuit parameters)
RL-load resistance (detection tester for electronic circuit parameters)
RG---signal source resistance
Thermal resistance Rth---
Ta-environment temperature
Tc-tube shell temperature
Ts-TJ
Tjm---the maximum junction temperature
Tstg---storage temperature
Td-delay time
Tr-rise time
Ts---storage time
Tf-fall time
Ton---opening times
Toff---turn-off time
VCB-collector-base voltage (DC)
VCE-collector-emitter voltage (DC)
VBE--base-emitter voltage (DC)
VCBO---base grounding, the emitter and collector roads, with base in specified conditions of maximum pressure resistance
VEBO---grounding base, collector and emitter-circuit, with base in specified conditions of maximum pressure resistance
VCEO---emitter ground, open on to the base, collector and emitter betweenIn the specify conditions of maximum pressure resistance
VCER---emitter ground, base and emitter resistance R between threaded, collector and emitter in specified conditions of maximum pressure resistance
VCES---emitter ground, short circuit to ground base, collector and emitter under specified conditions between the highest pressure resistance
VCEX---emitter ground, base and emitter between provisions of bias, collector and emitter in the provisions of the conditions of the high withstanding voltage
Vp-penetrating voltage.
VSB---secondary Breakdown voltage
VBB-base (DC) power supply voltage (detection tester for electronic circuit parameters)
Vcc-collector (DC) power supply voltage (detection tester for electronic circuit parameters)
VEE-emitter (DC) power supply voltage (detection tester for electronic circuit parameters)
VCE (sat)---emitter ground, Ic, IB of collector-emitter saturation voltage drop between
VBE (sat)---emitter ground, Ic, IB, base electrode-emitter saturation voltage drop (forward voltage drop)
VAGC---is coming to the automatic gain control voltage
Vn (p-p)---input equivalent noise peak voltage
V n---noise voltage
Cj-knot (very occasionally) capacitor, expressed in the provisions on both sides with a diode bias, germanium detector total capacitance diode
Cjv-biased junction capacitor
Co-zero bias voltage capacitor
Cjo---zero bias junction capacitor
Cjo/Cjn-knot capacitance change
Cs-tube capacitor capacitance or encapsulate shell
Ct---total capacitance
CTV-voltage temperature coefficient. In the test current, stable voltage variation of relative and absolute environmental temperature changes than
CTC-capacitor temperature coefficient
Cvn-nominal capacitance
IF---forward DC current (just to test current). Germanium detector diodes in the forward voltage VF, electricity by interelectrode; Silicon rectifier, Silicon reactor in the provisions of the conditions of use, the sine half wave allowing continuous through maximum operating current (mean), Silicon switching diode at rated power allowed by the maximum positive DC; measure Zener diode forward electrical parameters given current
IF (AV)---forward average current
IFM (IM)-positive peak current (to the maximum current). At rated power, allows a diode maximum forward current pulse. Light-emitting diode limiting current.
IH-constant current, maintain current.
Ii-from-current in led
IFRM---forward repetitive peak current
IFSM---is to not repeat the peak current (inrush current)
Io-rectifier current. In particular the provisions on the line voltage frequency and under the conditions stipulated by the current
IF (ov)---forward overload current
IL-photocurrent or steady flow diode limiting current
ID-the-dark current
IB2---unijunction transistor's base electrode modulated current
IEM---emitter peak current
IEB10---double base unijunction transistors in the emitter and the first base between reverse current
IEB20---double base unijunction transistors in the emitter to the current
ICM-the maximum average current
IFMP---forward pulse current
IP-peak current
IV---Valley point current
IGT--triggered thyristor control extremely-current
IGD-thyristor controlled extremely not trigger current
IGFM---control extremely positive peak current
IR (AV)---reverse average current
IR (In)---reverse DC current (reverse leakage current). In measuring the reverse feature given reverse current; Silicon reactor in sine half wave resistive load circuit, plus reverse voltage regulation value, the current; Silicon switching diode ends plus reverse voltage VR is the current; Zener diode reverse voltage and the resulting leakage current; rectifiers in sine half wave maximum reverse voltage of leakage current.
IRM---reverse peak current
IRR-thyristor average current reverse repeat
IDR-thyristor average repeat off-state current
IRRM---repetitive peak reverse current
IRSM---reverse out repetitive peak current (reverse surge current)
Irp---reverse recovery currents
Iz-a-stable voltage and current (reverse test current). Test reverse power parameters given reverse current
Izk---voltage tube knee point current
IOM-maximum forward (rectification) currents. Within the prescribed conditions, can be subjected to the maximum instantaneous current resistive load; sine half-wave rectifier circuit allows continuous adoption of Germanium detector diode maximum operating current
IZSM---Zener diode surge current
IZM-maximum voltage current. In maximum dissipation power Zener diode allows current
IF---is always instantaneous-current
IR---reverse total instantaneous-current
Ir---reverse recovery currents
Iop-operating current
Is---steady flow diode current
F---frequency
N---capacitance change index; capacitance ratio
Q---excellent value (qualityfactor)
Z-δ v-voltage tube voltage drift
Di/dt-on-State current and critical increase rate
Dv/dt-on-State voltage rise rate threshold
PB---bear pulse burnt power
PFT (AV)---is Wizard-average dissipation power
PFTM---forward peak dissipation power
PFT---is Wizard-total instantaneous dissipated power
Pd-dissipation powerR > PG-gate-to-average power
PGM-gate peak power
PC-control very average power or collector dissipation power
Pi-input power
PK-maximum switching power
PM---rated power. Silicon diode junction temperature not higher than 150 degrees can withstand the maximum power
PMP-maximum leakage through pulse power
PMS---the largest bear pulse power
Po---output power
PR---reverse surge power
Ptot---total dissipation power
Pomax---maximum output power
Psc-continuous output power
PSM---not repeat surge power
PZM---maximum dissipation power. Given the use conditions, the Zener diode allows afford maximum power
RF (r)---forward differential resistance. In General, the current Wizard with voltage index increases, rendered visible in the nonlinear characteristic. In a forward voltage, the voltage increase small quantity △ V, a corresponding increase in the forward current I, △ △ V/△ I called differential resistance
RBB---double base transistor's base electrode resistance between
RE---RF resistance
RL-load resistance
Rs (rs)-series resistance
Rth-thermal resistance
R (th) ja-thermal resistance junction to environment
Rz (ru)-dynamic resistance
R (th) jc---the thermal resistance junction to casing
Δ-r--decay resistance
R (th)-transient resistance
Ta-environment temperature
Tc---shell temperature
Td-delay time
Tf-fall time
Tfr-forward recovery time
Tg-circuit switching-off time
Tgt-gate control very open time
Tj-TJ
Tjm-maximum junction temperature
Ton---opening times
Toff---turn-off time
Tr-rise time
Trr---reverse recovery timer>Ts---storage time
Tstg---temperature compensation diode temperature of storage into
A---temperature coefficient
P-λ-led peak wavelength
△ Λ-spectral half-width
Η-unijunction transistor divider ratio or efficiency
VB---reverse Breakdown voltage peaks
Vc-rectifier input voltage
VB2B1-base voltage
VBE10---the emitter and the first base reverse voltage
VEB-saturation voltage drop
VFM---maximum forward voltage drop (positive peak voltage)
VF-forward voltage drop (forward DC voltage)
△ VF---forward voltage drop poorly
VDRM---repetitive peak off-state voltage
VGT-gate trigger voltage
VGD-gate does not trigger voltage
VGFM-gate to the peak voltage
VGRM---gate reverse peak voltage
VF (AV)---forward average voltage
Vo---AC input voltage
VOM---the average maximum output voltage
Vop-working voltage
Vn-Center voltage
Vp-peak voltage
VR---reverse voltage (reverse DC voltage)
VRM---reverse peak voltage (maximum test voltage)
V (BR)-Breakdown voltage
Vth-valve voltage (threshold voltage)
VRRM---repetitive peak reverse voltage (reverse surge voltage)
VRWM---reverse voltage peaks of work
V v---Valley point voltage
Vz-stable voltage
△ Vz-voltage range voltage increment
Vs-a-to-voltage (signal voltage) or steady flow pipe stable current and voltage
Av-voltage temperature coefficient
Vk-knee-point voltages (steady flow diode)
VL---limit voltage