【 Weak current College 】 semiconductor diode parameters symbols and meaning 】

CT-a-barrier capacitance
Cj-knot (very occasionally) capacitor, expressed in the provisions on both sides with a diode bias, germanium detector total capacitance diode
Cjv-biased junction capacitor
Co-zero bias voltage capacitor
Cjo---zero bias junction capacitor
Cjo/Cjn-knot capacitance change
Cs-tube capacitor capacitance or encapsulate shell
Ct---total capacitance
CTV-voltage temperature coefficient. In the test current, stable voltage variation of relative and absolute environmental temperature changes than
CTC-capacitor temperature coefficient
Cvn-nominal capacitance
IF---forward DC current (just to test current). Germanium detector diodes in the forward voltage VF, electricity by interelectrode; Silicon rectifier, Silicon reactor in the provisions of the conditions of use, the sine half wave allowing continuous through maximum operating current (mean), Silicon switching diode at rated power allowed by the maximum positive DC; measure Zener diode forward electrical parameters given current
IF (AV)---forward average current
IFM (IM)-positive peak current (to the maximum current). At rated power, allows a diode maximum forward current pulse. Light-emitting diode limiting current.
IH-constant current, maintain current.
Ii-from-current in led
IFRM---forward repetitive peak current
IFSM---is to not repeat the peak current (inrush current)
Io-rectifier current. In particular the provisions on the line voltage frequency and under the conditions stipulated by the current
IF (ov)---forward overload current
IL-photocurrent or steady flow diode limiting current
ID-the-dark current
IB2---unijunction transistor's base electrode modulated current
IEM---emitter peak current
IEB10---double base unijunction transistors in the emitter and the first base between reverse current
IEB20---double base unijunction transistors in the emitter to the current
ICM-the maximum average current
IFMP---forwardpulse current
IP-peak current
IV---Valley point current
IGT--triggered thyristor control extremely-current
IGD-thyristor controlled extremely not trigger current
IGFM---control extremely positive peak current
IR (AV)---reverse average current
IR (In)---reverse DC current (reverse leakage current). In measuring the reverse feature given reverse current; Silicon reactor in sine half wave resistive load circuit, plus reverse voltage regulation value, the current; Silicon switching diode ends plus reverse voltage VR is the current; Zener diode reverse voltage and the resulting leakage current; rectifiers in sine half wave maximum reverse voltage of leakage current.
IRM---reverse peak current
IRR-thyristor average current reverse repeat
IDR-thyristor average repeat off-state current
IRRM---repetitive peak reverse current
IRSM---reverse out repetitive peak current (reverse surge current)
Irp---reverse recovery currents
Iz-a-stable voltage and current (reverse test current). Test reverse power parameters given reverse current
Izk---voltage tube knee point current
IOM-maximum forward (rectification) currents. Within the prescribed conditions, can be subjected to the maximum instantaneous current resistive load; sine half-wave rectifier circuit allows continuous adoption of Germanium detector diode maximum operating current
IZSM---Zener diode surge current
IZM-maximum voltage current. In maximum dissipation power Zener diode allows current
IF---is always instantaneous-current
IR---reverse total instantaneous-current
Ir---reverse recovery currents
Iop-operating current
Is---steady flow diode current
F---frequency
N---capacitance change index; capacitance ratio
Q---excellent value (quality factor)
Z-δ v-voltage tube voltage drift
Di/dt-on-State current and critical increase rate
Dv/dt-on-State voltage rise rate threshold
PB---bear pulse burnt power
PFT (AV)---is Wizard-average dissipation power
PFTM---forward peak dissipation power
PFT---is Wizard-total instantaneous dissipated power
Pd-dissipation power
PG-gate-to-average power
PGM-gate peak power
PC-control very average power or collector dissipation power
Pi-input power
PK-maximum switching power
PM---rated power. Silicon diode junction temperature not higher than 150 degrees can withstand the maximum power
PMP-maximum leakage through pulse power
PMS---the largest bear pulse power
Po---output power
PR---reverse surge power
Ptot---total dissipation power
Pomax---maximum output power
Psc-continuous output power
PSM---not repeat surge power
PZM---maximum dissipation power. Given the use conditions, the Zener diode allows afford maximum power
RF (r)---forward differential resistance. In General, the current Wizard with voltage index increases, rendered visible in the nonlinear characteristic. In a forward voltage, the voltage increase small quantity △ V, a corresponding increase in the forward current I, △ △ V/△ I called differential resistance
RBB---double base transistor's base electrode resistance between
RE---Radio frequency resistance
RL-load resistance
Rs (rs)-series resistance
Rth-thermal resistance
R (th) ja-thermal resistance junction to environment
Rz (ru)-dynamic resistance
R (th) jc---the thermal resistance junction to casing
Δ-r--decay resistance
R (th)-transient resistance
Ta-environment temperature
Tc---shell temperature
Td-delay time
Tf-fall time
Tfr-forward recovery time
Tg-circuit switching-off time
Tgt-gate control very open time
Tj-TJ
Tjm-maximum junction temperature
Ton---opening times
Toff---turn-off time
Tr-rise time
Trr---reverse recovery time
Ts---storage time
Tstg---temperature compensation diode temperature of storage into
A---temperature coefficient
P-λ-led peak wavelength
△ Λ-spectral half-width
Η-unijunction transistor divider ratio or efficiency
VB---reverse Breakdown voltage peaks
Vc-rectifier input voltage
VB2B1-base voltage
VBE10---the emitter and the first base reverse voltage
VEB-saturation voltage drop
VFM---maximum forward voltage drop (positive peak voltage)
VF-forward voltage drop (forward DC voltage)
△ VF---forward voltage drop poorly
VDRM---repetitive peak off-state voltage
VGT-gate trigger voltage
VGD-gate does not trigger voltage
VGFM-gate to the peak voltage
VGRM---gate reverse peak voltage
VF (AV)---forward average voltage
Vo---AC input voltage
VOM---the average maximum output voltage
Vop-working voltage
Vn-Center voltage
Vp-peak voltage
VR---reverse voltage (reverse DC voltage)
VRM---reverse peak voltage (maximum test voltage)
V (BR)-Breakdown voltage
Vth-valve voltage (threshold voltage)
VRRM---repetitive peak reverse voltage (reverse surge voltage)
VRWM---reverse voltage peaks of work
V v---Valley point voltage
Vz-stable voltage
△ Vz-voltage range voltage increment
Vs-a-to-voltage (signal voltage) or steady flow pipe stable current and voltage
Av-voltage temperature coefficient
Vk-knee-point voltages (steady flow diode)
VL---limit voltage